IPI200N25N3GAKSA1

Specifications

Terminal Sayısı

3

Vgsth Max Id

4V @ 270μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

OptiMOS™

Pulsed Drain Currentmax Idm

256A

Power Dissipation Max

300W Tc

JESD-609 Kodu

e3

Kurşunsuz Kodu

no

Halogen Free

Halogen Free

Fet Type

N-Channel

Kurşunsuz

Contains Lead

Drive Voltage Max Rds On Min Rds On

10V

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

64A

Parça Durumu

Active

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drainsource On Resistancemax

0.02Ohm

Input Capacitance Ciss Max Vds

7100pF @ 100V

Gate Charge Qg Max Vgs

86nC @ 10V

Rds On Max Id Vgs

20m Ω @ 64A, 10V

Montaj Tipi

Through Hole

Fall Time Typ

12 ns

Fabrika Tedarik Süresi

18 Weeks

Rise Time

20ns

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

45 ns

Yayın Yılı

2011

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Pin Sayısı

3

Max Dual Supply Voltage

250V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Current Continuous Drain Id25

64A Tc

ECCN Kodu

EAR99