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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 176nC @ 10V
- Input Capacitance Ciss Max Vds
- 14000pF @ 25V
- Drainsource On Resistancemax
- 0.0019Ohm
- Ambalaj
- Tube
- Fabrika Tedarik Süresi
- 16 Weeks
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 16ns
- Fall Time Typ
- 36 ns
- Montaj Tipi
- Through Hole
- Rds On Max Id Vgs
- 1.9m Ω @ 100A, 10V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Continuous Drain Current Id
- 120A
- Kurşunsuz
- Contains Lead
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Terminal Pozisyonu
- SINGLE
- Power Dissipation Max
- 188W Tc
- Fet Type
- N-Channel
- Halogen Free
- Halogen Free
- Terminal Sayısı
- 3
- Pulsed Drain Currentmax Idm
- 480A
- Seri
- OptiMOS™
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 4V @ 140μA
- Vgs Max
- ±20V
- Turn On Delay Time
- 34 ns
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Max Dual Supply Voltage
- 40V
- ECCN Kodu
- EAR99
- Montaj
- Through Hole
- Current Continuous Drain Id25
- 120A Tc
- Kılıf / Paket
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Avalanche Energy Rating Eas
- 750 mJ
- Number Of Elements
- 1
- Yayın Yılı
- 2010
- Turn Off Delay Time
- 41 ns
- Gate To Source Voltage Vgs
- 20V
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