Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Avalanche Energy Rating Eas
- 780 mJ
- Number Of Elements
- 1
- Turn Off Delay Time
- 46 ns
- Drain To Source Breakdown Voltage
- 150V
- Power Dissipation
- 300W
- Turn On Delay Time
- 25 ns
- Terminal Kaplaması
- Tin (Sn)
- Transistor Application
- SWITCHING
- Power Dissipation Max
- 300W Tc
- JESD-609 Kodu
- e3
- Kurşunsuz Kodu
- yes
- Weight
- 2.387001g
- Fet Type
- N-Channel
- Pulsed Drain Currentmax Idm
- 400A
- Input Capacitance Ciss Max Vds
- 5470pF @ 75V
- Rise Time
- 35ns
- Ambalaj
- Tube
- Montaj Tipi
- Through Hole
- Continuous Drain Current Id
- 100A
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Pin Sayısı
- 3
- Yayın Yılı
- 2008
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 3
- Element Configuration
- Single
- RoHS Durumu
- ROHS3 Compliant
- Threshold Voltage
- 3V
- Vgs Max
- ±20V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Max Dual Supply Voltage
- 150V
- Radyasyon Dayanımı
- No
- ECCN Kodu
- EAR99
- Montaj
- Through Hole
- Current Continuous Drain Id25
- 100A Tc
- Kılıf / Paket
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Halogen Free
- Halogen Free
- Terminal Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Seri
- OptiMOS™
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