IPI045N10N3GXKSA1

Specifications

Halogen Free

Halogen Free

Vgsth Max Id

3.5V @ 150μA

Seri

OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

3

Fall Time Typ

14 ns

Rds On Max Id Vgs

4.5m Ω @ 100A, 10V

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.0045Ohm

Gate Charge Qg Max Vgs

117nC @ 10V

Terminal Pozisyonu

SINGLE

Drive Voltage Max Rds On Min Rds On

6V 10V

Kurşunsuz

Lead Free

Pin Sayısı

3

Jesd30 Code

R-PSIP-T3

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Yayın Yılı

2008

Qualification Status

Not Qualified

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgs Max

±20V

Current Continuous Drain Id25

100A Tc

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Montaj

Through Hole

ECCN Kodu

EAR99

Max Dual Supply Voltage

100V

Fet Type

N-Channel

Kurşunsuz Kodu

yes

Power Dissipation Max

214W Tc

JESD-609 Kodu

e3

Pulsed Drain Currentmax Idm

400A

Montaj Tipi

Through Hole

Ambalaj

Tube

Rise Time

59ns

Input Capacitance Ciss Max Vds

8410pF @ 50V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Parça Durumu

Active

Continuous Drain Current Id

100A