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IPG20N04S409ATMA1

Infineon Technologies

IPG20N04S409ATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Drain Currentmax Abs Id
20A
Nem Hassasiyeti (MSL)
1 (Unlimited)
Pulsed Drain Currentmax Idm
80A
Terminal Sayısı
8
Fet Technology
METAL-OXIDE SEMICONDUCTOR
Parça Durumu
Active
Terminal Pozisyonu
DUAL
Transistor Element Material
SILICON
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Terminal Formu
FLAT
REACH Uyumluluk Kodu
not_compliant
Operating Mode
ENHANCEMENT MODE
Fabrika Tedarik Süresi
12 Weeks
Ambalaj
Tape & Reel (TR)
Drainsource On Resistancemax
0.0086Ohm
Reference Standard
AEC-Q101
Jesd30 Code
R-PDSO-F8
RoHS Durumu
ROHS3 Compliant
Yayın Yılı
2010
Number Of Elements
2
Avalanche Energy Rating Eas
145 mJ
ECCN Kodu
EAR99
Ds Breakdown Voltagemin
40V
Polaritychannel Type
N-CHANNEL
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Yüzey Montaj
YES
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

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