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IPD90N06S4L05ATMA2

Infineon Technologies

IPD90N06S4L05ATMA2

Single MOSFETs Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Terminal Kaplaması
Tin (Sn)
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
Turn On Delay Time
14 ns
Çalışma Sıcaklığı
-55°C~175°C TJ
Vgs Max
±16V
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Current Continuous Drain Id25
90A Tc
Montaj
Surface Mount
Max Dual Supply Voltage
60V
Number Of Elements
1
Jesd30 Code
R-PSSO-G2
RoHS Durumu
ROHS3 Compliant
Gate To Source Voltage Vgs
16V
Pin Sayısı
3
Turn Off Delay Time
80 ns
Yayın Yılı
2009
Montaj Tipi
Surface Mount
Fall Time Typ
13 ns
Rds On Max Id Vgs
4.6m Ω @ 90A, 10V
Ambalaj
Tape & Reel (TR)
Fabrika Tedarik Süresi
16 Weeks
Rise Time
4ns
Operating Mode
ENHANCEMENT MODE
Drainsource On Resistancemax
0.0046Ohm
Gate Charge Qg Max Vgs
110nC @ 10V
Input Capacitance Ciss Max Vds
8180pF @ 25V
Number Of Channels
1
Transistor Element Material
SILICON
Parça Durumu
Active
Terminal Pozisyonu
SINGLE
Terminal Formu
GULL WING
Continuous Drain Current Id
90A
REACH Uyumluluk Kodu
not_compliant
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Fet Type
N-Channel
Kurşunsuz Kodu
yes
Weight
3.949996g
JESD-609 Kodu
e3
Power Dissipation Max
107W Tc

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