IPD80R600P7ATMA1

Specifications

Number Of Elements

1

Avalanche Energy Rating Eas

20 mJ

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSSO-G2

Yayın Yılı

2014

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

YES

Case Connection

DRAIN

Terminal Kaplaması

Tin (Sn)

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

800V

Current Continuous Drain Id25

8A Tc

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fet Type

N-Channel

JESD-609 Kodu

e3

Power Dissipation Max

60W Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

CoolMOS™ P7

Pulsed Drain Currentmax Idm

22A

Drain To Source Voltage Vdss

800V

Vgsth Max Id

3.5V @ 170μA

Terminal Sayısı

2

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

18 Weeks

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

600m Ω @ 3.4A, 10V

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

570pF @ 500V

Gate Charge Qg Max Vgs

20nC @ 10V

Drainsource On Resistancemax

0.6Ohm

Parça Durumu

Active

Terminal Pozisyonu

SINGLE

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Jedec95 Code

TO-252AA

Drive Voltage Max Rds On Min Rds On

10V