IPD80R4K5P7ATMA1

Specifications

Gate Charge Qg Max Vgs

4nC @ 10V

Input Capacitance Ciss Max Vds

80pF @ 500V

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

4.5 Ω @ 400mA, 10V

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Continuous Drain Current Id

1.5A

REACH Uyumluluk Kodu

not_compliant

Drive Voltage Max Rds On Min Rds On

10V

Jedec95 Code

TO-252AA

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Terminal Pozisyonu

SINGLE

Kurşunsuz Kodu

yes

Power Dissipation Max

13W Tc

JESD-609 Kodu

e3

Fet Type

N-Channel

Terminal Sayısı

2

Drain To Source Voltage Vdss

800V

Vgsth Max Id

3.5V @ 200μA

Pulsed Drain Currentmax Idm

2.6A

Seri

CoolMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Terminal Kaplaması

Tin (Sn)

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Continuous Drain Id25

1.5A Tc

Ds Breakdown Voltagemin

800V

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Montaj

Surface Mount

Avalanche Energy Rating Eas

1 mJ

Number Of Elements

1