IPD80R3K3P7ATMA1

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Continuous Drain Id25

1.9A Tc

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

800V

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Yüzey Montaj

YES

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Yayın Yılı

2014

Jesd30 Code

R-PSSO-G2

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

2 mJ

Number Of Elements

1

Terminal Formu

GULL WING

Drive Voltage Max Rds On Min Rds On

10V

Jedec95 Code

TO-252AA

Parça Durumu

Active

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

120pF @ 500V

Gate Charge Qg Max Vgs

5.8nC @ 10V

Rds On Max Id Vgs

3.3 Ω @ 590mA, 10V

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

2

Drain To Source Voltage Vdss

800V

Vgsth Max Id

3.5V @ 30μA

Seri

CoolMOS™ P7

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

3.8A

Power Dissipation Max

18W Tc

Fet Type

N-Channel