IPD80R2K0P7ATMA1

Specifications

Number Of Elements

1

Avalanche Energy Rating Eas

6 mJ

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSSO-G2

Yayın Yılı

2014

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

YES

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Ds Breakdown Voltagemin

800V

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Current Continuous Drain Id25

3A Tc

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fet Type

N-Channel

Power Dissipation Max

24W Tc

Pulsed Drain Currentmax Idm

6A

Seri

CoolMOS™ P7

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Voltage Vdss

800V

Vgsth Max Id

3.5V @ 50μA

Terminal Sayısı

2

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

18 Weeks

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

2 Ω @ 940mA, 10V

Gate Charge Qg Max Vgs

9nC @ 10V

Input Capacitance Ciss Max Vds

175pF @ 500V

Drainsource On Resistancemax

2Ohm

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Parça Durumu

Active

Jedec95 Code

TO-252AA

Drive Voltage Max Rds On Min Rds On

10V

Terminal Formu

GULL WING