IPD80R280P7ATMA1

Specifications

Jesd30 Code

R-PSSO-G2

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2013

Number Of Elements

1

Fet Feature

Super Junction

Avalanche Energy Rating Eas

43 mJ

Current Continuous Drain Id25

17A Tc

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

800V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

YES

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Drain To Source Voltage Vdss

800V

Vgsth Max Id

3.5V @ 360μA

Seri

CoolMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pulsed Drain Currentmax Idm

45A

Terminal Sayısı

2

Fet Type

N-Channel

Power Dissipation Max

101W Tc

Kurşunsuz Kodu

yes

Terminal Pozisyonu

SINGLE

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

GULL WING

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

280m Ω @ 7.2A, 10V

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.28Ohm

Input Capacitance Ciss Max Vds

1200pF @ 500V

Gate Charge Qg Max Vgs

36nC @ 10V