IPD80R1K4P7ATMA1

Specifications

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSSO-G2

Yayın Yılı

2010

Fet Feature

Super Junction

Number Of Elements

1

Avalanche Energy Rating Eas

8 mJ

Ds Breakdown Voltagemin

800V

ECCN Kodu

EAR99

Montaj

Surface Mount

Transistor Application

SWITCHING

Current Continuous Drain Id25

4A Tc

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Tin (Sn)

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Pulsed Drain Currentmax Idm

8.9A

Seri

CoolMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Voltage Vdss

800V

Vgsth Max Id

3.5V @ 700μA

Terminal Sayısı

2

Fet Type

N-Channel

Kurşunsuz Kodu

yes

Power Dissipation Max

32W Tc

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Parça Durumu

Active

Terminal Pozisyonu

SINGLE

Continuous Drain Current Id

4A

REACH Uyumluluk Kodu

not_compliant

Drive Voltage Max Rds On Min Rds On

10V

Terminal Formu

GULL WING

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount