IPD80R1K2P7ATMA1

Specifications

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Terminal Kaplaması

Tin (Sn)

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

YES

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Continuous Drain Id25

4.5A Tc

Ds Breakdown Voltagemin

800V

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Avalanche Energy Rating Eas

10 mJ

Number Of Elements

1

Yayın Yılı

2014

Jesd30 Code

R-PSSO-G2

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

11nC @ 10V

Input Capacitance Ciss Max Vds

300pF @ 500V

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

1.2 Ω @ 1.7A, 10V

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

18 Weeks

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Drive Voltage Max Rds On Min Rds On

10V

REACH Uyumluluk Kodu

not_compliant

Jedec95 Code

TO-252AA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Parça Durumu

Active

Power Dissipation Max

37W Tc

JESD-609 Kodu

e3

Fet Type

N-Channel

Terminal Sayısı

2

Vgsth Max Id

3.5V @ 80μA

Drain To Source Voltage Vdss

800V

Pulsed Drain Currentmax Idm

11A

Nem Hassasiyeti (MSL)

1 (Unlimited)