IPD70N12S311ATMA1

Specifications

Ds Breakdown Voltagemin

120V

ECCN Kodu

EAR99

Current Continuous Drain Id25

70A Tc

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~175°C TJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Yüzey Montaj

YES

Terminal Kaplaması

Tin (Sn)

Yayın Yılı

2016

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSSO-G2

Avalanche Energy Rating Eas

410 mJ

Number Of Elements

1

REACH Uyumluluk Kodu

not_compliant

Drive Voltage Max Rds On Min Rds On

10V

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Parça Durumu

Active

Gate Charge Qg Max Vgs

65nC @ 10V

Input Capacitance Ciss Max Vds

4355pF @ 25V

Drainsource On Resistancemax

0.0111Ohm

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

14 Weeks

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

11.1m Ω @ 70A, 10V

Terminal Sayısı

2

Pulsed Drain Currentmax Idm

280A

Seri

Automotive, AEC-Q101, OptiMOS™

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain Currentmax Abs Id

70A

Drain To Source Voltage Vdss

120V

Vgsth Max Id

4V @ 83μA

JESD-609 Kodu

e3

Power Dissipation Max

125W Tc

Fet Type

N-Channel