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IPD70N10S3L12ATMA1

Infineon Technologies

IPD70N10S3L12ATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Turn On Delay Time
12 ns
Terminal Kaplaması
Tin (Sn)
Configuration
SINGLE WITH BUILT-IN DIODE
Turn Off Delay Time
35 ns
Avalanche Energy Rating Eas
410 mJ
Number Of Elements
1
Terminal Formu
GULL WING
Continuous Drain Current Id
70A
REACH Uyumluluk Kodu
not_compliant
Parça Durumu
Active
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Transistor Element Material
SILICON
Input Capacitance Ciss Max Vds
5550pF @ 25V
Montaj Tipi
Surface Mount
Rise Time
6ns
Ambalaj
Tape & Reel (TR)
Pulsed Drain Currentmax Idm
280A
Power Dissipation Max
125W Tc
JESD-609 Kodu
e3
Fet Type
N-Channel
Max Dual Supply Voltage
100V
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Current Continuous Drain Id25
70A Tc
Montaj
Surface Mount
ECCN Kodu
EAR99
Çalışma Sıcaklığı
-55°C~175°C TJ
Vgs Max
±20V
Case Connection
DRAIN
Pin Sayısı
3
Gate To Source Voltage Vgs
16V
Yayın Yılı
2011
Reference Standard
AEC-Q101
Jesd30 Code
R-PSSO-G2
RoHS Durumu
ROHS3 Compliant
Kurşunsuz
Contains Lead
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Terminal Pozisyonu
SINGLE
Drainsource On Resistancemax
0.0152Ohm
Gate Charge Qg Max Vgs
77nC @ 10V

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