IPD65R950C6ATMA1

Specifications

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Turn On Delay Time

6.6 ns

Power Dissipation

37W

Drain To Source Breakdown Voltage

650V

Turn Off Delay Time

41 ns

Number Of Elements

1

Avalanche Energy Rating Eas

50 mJ

Parça Durumu

Not For New Designs

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

GULL WING

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

4.5A

Montaj Tipi

Surface Mount

Rise Time

5.2ns

Ambalaj

Tape & Reel (TR)

Input Capacitance Ciss Max Vds

328pF @ 100V

Fet Type

N-Channel

Power Dissipation Max

37W Tc

JESD-609 Kodu

e3

Weight

3.949996g

Current Continuous Drain Id25

4.5A Tc

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Montaj

Surface Mount

Max Dual Supply Voltage

650V

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Jesd30 Code

R-PSSO-G2

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Yayın Yılı

2008

Kurşunsuz

Contains Lead, Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Rds On Max Id Vgs

950m Ω @ 1.5A, 10V

Fall Time Typ

13.6 ns

Operating Mode

ENHANCEMENT MODE