IPD65R650CEAUMA1

Specifications

Drainsource On Resistancemax

0.65Ohm

Input Capacitance Ciss Max Vds

440pF @ 100V

Gate Charge Qg Max Vgs

23nC @ 10V

Rds On Max Id Vgs

650m Ω @ 2.1A, 10V

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

18 Weeks

Ambalaj

Tape & Reel (TR)

Terminal Formu

GULL WING

Kurşunsuz

Contains Lead

Drive Voltage Max Rds On Min Rds On

10V

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

7A

Terminal Pozisyonu

SINGLE

Parça Durumu

Active

Transistor Element Material

SILICON

Power Dissipation Max

86W Tc

JESD-609 Kodu

e3

Kurşunsuz Kodu

yes

Halogen Free

Halogen Free

Fet Type

N-Channel

Terminal Sayısı

2

Vgsth Max Id

3.5V @ 210μA

Nem Hassasiyeti (MSL)

3 (168 Hours)

Seri

CoolMOS™ CE

Pulsed Drain Currentmax Idm

18A

Çalışma Sıcaklığı

-40°C~150°C TJ

Vgs Max

±20V

Terminal Kaplaması

Tin (Sn)

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Max Dual Supply Voltage

650V

Current Continuous Drain Id25

7A Tc

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Montaj

Surface Mount

Avalanche Energy Rating Eas

142 mJ

Number Of Elements

1

Yayın Yılı

2013