IPD65R380E6ATMA1

Specifications

Jesd30 Code

R-PSSO-G2

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Yayın Yılı

2008

Turn Off Delay Time

57 ns

Number Of Elements

1

Avalanche Energy Rating Eas

215 mJ

Current Continuous Drain Id25

10.6A Tc

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

HTS Kodu

8541.29.00.95

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Montaj

Surface Mount

Max Dual Supply Voltage

650V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Kaplaması

Tin (Sn)

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time

10 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±20V

Vgsth Max Id

3.5V @ 320μA

Pulsed Drain Currentmax Idm

29A

Seri

CoolMOS™ E6

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

2

Fet Type

N-Channel

Power Dissipation Max

83W Tc

JESD-609 Kodu

e3

Jedec95 Code

TO-252AA

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

Parça Durumu

Not For New Designs

Terminal Formu

GULL WING

Drive Voltage Max Rds On Min Rds On

10V

REACH Uyumluluk Kodu

not_compliant

Continuous Drain Current Id

10.6A

Fall Time Typ

8 ns