IPD60R950C6ATMA1

Specifications

Input Capacitance Ciss Max Vds

280pF @ 100V

Transistor Application

SWITCHING

Drainsource On Resistancemax

0.95Ohm

Turn Off Delay Time

60 ns

Power Dissipation

37W

Turn On Delay Time

10 ns

Element Configuration

Single

Current Continuous Drain Id25

4.4A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

30V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

3

Fall Time Typ

13 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Ambalaj

Tape & Reel (TR)

Max Dual Supply Voltage

600V

Vgsth Max Id

3.5V @ 130μA

Rise Time

8ns

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Fabrika Tedarik Süresi

12 Weeks

Rds On Max Id Vgs

950m Ω @ 1.5A, 10V

Drain To Source Breakdown Voltage

600V

Number Of Channels

1

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

REACH Uyumluluk Kodu

not_compliant

Yayın Yılı

2008

Parça Durumu

Not For New Designs

Vgs Max

±20V

Weight

3.949996g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

13nC @ 10V

Terminal Sayısı

2

Power Dissipation Max

37W Tc