IPD60R650CEATMA1

Specifications

Input Capacitance Ciss Max Vds

440pF @ 100V

ECCN Kodu

EAR99

Number Of Channels

1

Drain To Source Voltage Vdss

600V

Transistor Application

SWITCHING

Rds On Max Id Vgs

650m Ω @ 2.4A, 10V

Drainsource On Resistancemax

0.65Ohm

RoHS Durumu

RoHS Compliant

Turn On Delay Time

10 ns

Turn Off Delay Time

58 ns

Operating Mode

ENHANCEMENT MODE

Element Configuration

Single

Kurşunsuz

Lead Free

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

7A Tc

Yayın Yılı

2014

Vgs Max

±20V

Weight

3.949996g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

600V

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

11 ns

Gate Charge Qg Max Vgs

20.5nC @ 10V

Number Of Elements

1

Çalışma Sıcaklığı

-40°C~150°C TJ

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

2

Power Dissipation Max

63W Tc

Vgsth Max Id

3.5V @ 200μA

Montaj

Surface Mount

Jesd30 Code

R-PSSO-G2

Rise Time

8ns

Continuous Drain Current Id

7A

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection

DRAIN