IPD60R600P7SAUMA1

Specifications

Avalanche Energy Rating Eas

17 mJ

JESD-609 Kodu

e3

Seri

CoolMOS™ P7

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Sayısı

2

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Çalışma Sıcaklığı

-40°C~150°C TJ

Jesd30 Code

R-PSSO-G2

Vgsth Max Id

4V @ 80μA

Power Dissipation Max

30W Tc

Terminal Pozisyonu

SINGLE

Ds Breakdown Voltagemin

600V

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

GULL WING

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Gate Charge Qg Max Vgs

9nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Voltage Vdss

600V

Transistor Application

SWITCHING

Rds On Max Id Vgs

600m Ω @ 1.7A, 10V

Pulsed Drain Currentmax Idm

16A

Drainsource On Resistancemax

0.6Ohm

Input Capacitance Ciss Max Vds

363pF @ 400V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

18 Weeks

Yayın Yılı

2014

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

6A Tc

REACH Uyumluluk Kodu

not_compliant

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE