IPD60R600P7ATMA1

Specifications

Avalanche Energy Rating Eas

17 mJ

Kurşunsuz Kodu

yes

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

CoolMOS™ P7

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Sayısı

2

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~150°C TJ

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

30W Tc

Vgsth Max Id

4V @ 80μA

Terminal Pozisyonu

SINGLE

Ds Breakdown Voltagemin

600V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Gate Charge Qg Max Vgs

9nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Voltage Vdss

650V

Drainsource On Resistancemax

0.6Ohm

Pulsed Drain Currentmax Idm

16A

Rds On Max Id Vgs

600m Ω @ 1.7A, 10V

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

363pF @ 400V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

2 Weeks

Yayın Yılı

2014

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

6A Tc

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE