IPD60R600P6ATMA1

Specifications

Input Capacitance Ciss Max Vds

557pF @ 100V

Transistor Application

SWITCHING

Drainsource On Resistancemax

0.6Ohm

Turn Off Delay Time

33 ns

Turn On Delay Time

11 ns

Element Configuration

Single

Uzunluk

6.73mm

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

7.3A Tc

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

30V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

3

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

1

Ambalaj

Tape & Reel (TR)

Halogen Free

Not Halogen Free

Max Dual Supply Voltage

600V

Vgsth Max Id

4.5V @ 200μA

Genişlik

6.22mm

Threshold Voltage

4V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

18 Weeks

ECCN Kodu

EAR99

Rds On Max Id Vgs

600m Ω @ 2.4A, 10V

Number Of Channels

1

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Lead Free

Yayın Yılı

2008

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

3.949996g

Vgs Max

±20V

Transistor Element Material

SILICON

Drive Voltage Max Rds On Min Rds On

10V

Yükseklik

2.41mm

Gate Charge Qg Max Vgs

12nC @ 10V