IPD60R450E6ATMA1

Specifications

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

70 ns

RoHS Durumu

RoHS Compliant

Turn On Delay Time

11 ns

Yayın Yılı

2015

Current Continuous Drain Id25

9.2A Tc

Input Capacitance Ciss Max Vds

620pF @ 100V

Fabrika Tedarik Süresi

12 Weeks

Pulsed Drain Currentmax Idm

26A

Drainsource On Resistancemax

0.45Ohm

Rds On Max Id Vgs

450m Ω @ 3.4A, 10V

Drain To Source Breakdown Voltage

600V

Radyasyon Dayanımı

No

Transistor Application

SWITCHING

Number Of Channels

1

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

28nC @ 10V

Fall Time Typ

10 ns

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Weight

3.949996g

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Power Dissipation Max

74W Tc

Vgsth Max Id

3.5V @ 280μA

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

1

Max Dual Supply Voltage

600V

Terminal Sayısı

2

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE