IPD60R2K0C6ATMA1

Specifications

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

CoolMOS™ C6

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Kurşunsuz Kodu

yes

Continuous Drain Current Id

2.4A

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Power Dissipation Max

22.3W Tc

Vgsth Max Id

3.5V @ 60μA

Max Dual Supply Voltage

600V

Terminal Sayısı

2

Ambalaj

Tape & Reel (TR)

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

1

Gate Charge Qg Max Vgs

6.7nC @ 10V

Fall Time Typ

50 ns

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Terminal Pozisyonu

SINGLE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Parça Durumu

Not For New Designs

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Yayın Yılı

2008

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

2.4A Tc

REACH Uyumluluk Kodu

not_compliant

Turn Off Delay Time

30 ns

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Turn On Delay Time

7 ns

Transistor Application

SWITCHING

Rds On Max Id Vgs

2 Ω @ 760mA, 10V

Pulsed Drain Currentmax Idm

6A