IPD60R280P7ATMA1

Specifications

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

18nC @ 10V

Terminal Formu

GULL WING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Parça Durumu

Active

Terminal Pozisyonu

SINGLE

Ds Breakdown Voltagemin

600V

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2014

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

12A Tc

Input Capacitance Ciss Max Vds

761pF @ 400V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

18 Weeks

Drain To Source Voltage Vdss

600V

Pulsed Drain Currentmax Idm

36A

Drainsource On Resistancemax

0.28Ohm

Rds On Max Id Vgs

280m Ω @ 3.8A, 10V

Transistor Application

SWITCHING

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

CoolMOS™ P7

Fet Type

N-Channel

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Avalanche Energy Rating Eas

38 mJ

Power Dissipation Max

53W Tc

Vgsth Max Id

4V @ 190μA

Jesd30 Code

R-PSSO-G2

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

2

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES