IPD60N10S4L12ATMA1

Specifications

Gate To Source Voltage Vgs

16V

Terminal Formu

GULL WING

Vgs Max

±16V

Weight

3.949996g

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Pin Sayısı

3

Gate Charge Qg Max Vgs

49nC @ 10V

Fall Time Typ

21 ns

Input Capacitance Ciss Max Vds

3170pF @ 25V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

14 Weeks

Number Of Channels

1

Drain To Source Breakdown Voltage

100V

Pulsed Drain Currentmax Idm

240A

Rds On Max Id Vgs

12m Ω @ 60A, 10V

Element Configuration

Single

Kurşunsuz

Contains Lead

REACH Uyumluluk Kodu

not_compliant

Turn On Delay Time

4 ns

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

20 ns

Yayın Yılı

2011

Current Continuous Drain Id25

60A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

JESD-609 Kodu

e3

Rise Time

3ns

Continuous Drain Current Id

60A

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection

DRAIN

Seri

Automotive, AEC-Q101, HEXFET®

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ