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IPD60N10S412ATMA1

Infineon Technologies

IPD60N10S412ATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Jesd30 Code
R-PSSO-G2
Montaj
Surface Mount
Power Dissipation Max
94W Tc
Terminal Sayısı
2
Montaj Tipi
Surface Mount
Fet Type
N-Channel
Seri
Automotive, AEC-Q101, OptiMOS™
Case Connection
DRAIN
Continuous Drain Current Id
60A
Avalanche Energy Rating Eas
120 mJ
Kurşunsuz Kodu
yes
JESD-609 Kodu
e3
Yayın Yılı
2013
Operating Mode
ENHANCEMENT MODE
RoHS Durumu
ROHS3 Compliant
Kurşunsuz
Contains Lead
REACH Uyumluluk Kodu
not_compliant
Rds On Max Id Vgs
12.2m Ω @ 60A, 10V
Fabrika Tedarik Süresi
14 Weeks
ECCN Kodu
EAR99
Gate Charge Qg Max Vgs
34nC @ 10V
Drive Voltage Max Rds On Min Rds On
10V
Transistor Element Material
SILICON
Parça Durumu
Active
Vgs Max
±20V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Vgsth Max Id
3.5V @ 46μA
Ambalaj
Tape & Reel (TR)
Halogen Free
Halogen Free
Max Dual Supply Voltage
100V
Çalışma Sıcaklığı
-55°C~175°C TJ
Number Of Elements
1
Terminal Kaplaması
Tin (Sn)
Configuration
SINGLE WITH BUILT-IN DIODE
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Rise Time
3ns
Current Continuous Drain Id25
60A Tc
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Turn Off Delay Time
9 ns
Turn On Delay Time
6 ns

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