IPD530N15N3GATMA1

Specifications

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Contains Lead

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2008

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

21A Tc

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

887pF @ 75V

Fabrika Tedarik Süresi

18 Weeks

Transistor Application

SWITCHING

Rds On Max Id Vgs

53m Ω @ 18A, 10V

Pulsed Drain Currentmax Idm

84A

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

8V 10V

Gate Charge Qg Max Vgs

12nC @ 10V

Terminal Formu

GULL WING

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Terminal Pozisyonu

SINGLE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Power Dissipation Max

68W Tc

Vgsth Max Id

4V @ 35μA

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Elements

1

Halogen Free

Halogen Free

Max Dual Supply Voltage

150V

Terminal Sayısı

2

Ambalaj

Tape & Reel (TR)

Case Connection

DRAIN

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

OptiMOS™

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

60 mJ