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Infineon Technologies

IPD50R950CEAUMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Yükseklik
2.41mm
Rds On Max
950 mΩ
Fall Time Typ
19.5 ns
Pin Sayısı
3
Parça Durumu
Active
Nem Hassasiyeti (MSL)
3 (168 Hours)
Terminal Formu
GULL WING
Gate To Source Voltage Vgs
20V
Yayın Yılı
2008
Operating Mode
ENHANCEMENT MODE
Turn Off Delay Time
25 ns
Turn On Delay Time
7 ns
Power Dissipation
34W
RoHS Durumu
ROHS3 Compliant
Kurşunsuz
Contains Lead, Lead Free
Fet Technology
METAL-OXIDE SEMICONDUCTOR
REACH Uyumluluk Kodu
not_compliant
Uzunluk
6.73mm
Element Configuration
Single
Transistor Application
SWITCHING
Drain To Source Breakdown Voltage
500V
Pulsed Drain Currentmax Idm
12.8A
Drain To Source Voltage Vdss
500V
Fabrika Tedarik Süresi
18 Weeks
ECCN Kodu
EAR99
Drain To Source Resistance
950mOhm
Kılıf / Paket
TO-252-3
Max Power Dissipation
34W
Rise Time
4.9ns
Continuous Drain Current Id
4.3A
Genişlik
6.22mm
Kurşunsuz Kodu
yes
Avalanche Energy Rating Eas
68 mJ
JESD-609 Kodu
e3
Min. Çalışma Sıcaklığı
-55°C
Jesd30 Code
R-PSSO-G2
Montaj
Surface Mount
Polaritychannel Type
N-CHANNEL
Maks. Çalışma Sıcaklığı
150°C
Ambalaj
Tape & Reel (TR)

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