IPD50R950CEATMA1

Specifications

Vgsth Max Id

3.5V @ 100μA

Power Dissipation Max

53W Tc

Montaj

Surface Mount

Jesd30 Code

R-PSSO-G2

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

2

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Seri

CoolMOS™ CE

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

68 mJ

Kurşunsuz Kodu

yes

Continuous Drain Current Id

4.3A

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2013

Current Continuous Drain Id25

4.3A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

231pF @ 100V

ECCN Kodu

EAR99

Drain To Source Voltage Vdss

500V

Drainsource On Resistancemax

0.95Ohm

Pulsed Drain Currentmax Idm

12.8A

Rds On Max Id Vgs

950m Ω @ 1.2A, 13V

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

13V

Gate Charge Qg Max Vgs

10.5nC @ 10V

Terminal Formu

GULL WING

Vgs Max

±20V

Nem Hassasiyeti (MSL)

3 (168 Hours)

Parça Durumu

Discontinued

Terminal Pozisyonu

SINGLE

Ds Breakdown Voltagemin

500V

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED