IPD50R3K0CEAUMA1

Specifications

Gate Charge Qg Max Vgs

4.3nC @ 10V

Drive Voltage Max Rds On Min Rds On

13V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Nem Hassasiyeti (MSL)

3 (168 Hours)

Vgs Max

±20V

Parça Durumu

Active

Terminal Formu

GULL WING

Current Continuous Drain Id25

1.7A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2013

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Contains Lead

Transistor Application

SWITCHING

Rds On Max Id Vgs

3 Ω @ 400mA, 13V

Drainsource On Resistancemax

3Ohm

Pulsed Drain Currentmax Idm

4.1A

Fabrika Tedarik Süresi

18 Weeks

Input Capacitance Ciss Max Vds

84pF @ 100V

ECCN Kodu

EAR99

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

CoolMOS™ CE

Fet Type

N-Channel

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current Id

1.7A

Avalanche Energy Rating Eas

18 mJ

Kurşunsuz Kodu

yes

JESD-609 Kodu

e3

Montaj

Surface Mount

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

26W Tc

Vgsth Max Id

3.5V @ 30μA

Ambalaj

Tape & Reel (TR)

HTS Kodu

8541.29.00.95

Terminal Sayısı

2

Halogen Free

Halogen Free