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IPD50N12S3L15ATMA1

Infineon Technologies

IPD50N12S3L15ATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Terminal Formu
GULL WING
Parça Durumu
Active
Nem Hassasiyeti (MSL)
1 (Unlimited)
Ds Breakdown Voltagemin
120V
Terminal Pozisyonu
SINGLE
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Transistor Element Material
SILICON
ECCN Kodu
EAR99
Fabrika Tedarik Süresi
14 Weeks
Jedec95 Code
TO-252
Drain Currentmax Abs Id
50A
Pulsed Drain Currentmax Idm
200A
Drainsource On Resistancemax
0.02Ohm
Fet Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
RoHS Durumu
ROHS3 Compliant
Yayın Yılı
2016
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Reference Standard
AEC-Q101
Kurşunsuz Kodu
yes
Operating Temperature Min
-55°C
Avalanche Energy Rating Eas
330 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
Number Of Elements
1
Terminal Sayısı
2
Yüzey Montaj
YES
Ambalaj
Tape & Reel (TR)
Polaritychannel Type
N-CHANNEL
Jesd30 Code
R-PSSO-G2

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