IPD50N10S3L16ATMA1

Specifications

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

4180pF @ 25V

Fabrika Tedarik Süresi

14 Weeks

Rds On Max Id Vgs

15m Ω @ 50A, 10V

Pulsed Drain Currentmax Idm

200A

Drainsource On Resistancemax

0.0199Ohm

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Contains Lead

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

29 ns

Turn On Delay Time

10 ns

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2011

Current Continuous Drain Id25

50A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Parça Durumu

Active

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Gate Charge Qg Max Vgs

64nC @ 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Kaplaması

Matte Tin (Sn)

Number Of Elements

1

Halogen Free

Halogen Free

Max Dual Supply Voltage

100V

Terminal Sayısı

2

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

2.4V @ 60μA

Power Dissipation Max

100W Tc

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

JESD-609 Kodu

e3

Reference Standard

AEC-Q101

Rise Time

5ns