IPD50N08S413ATMA1

Specifications

Gate Charge Qg Max Vgs

30nC @ 10V

Drive Voltage Max Rds On Min Rds On

10V

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Parça Durumu

Active

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

50A Tc

Yayın Yılı

2013

RoHS Durumu

ROHS3 Compliant

Power Dissipation

72W

Operating Mode

ENHANCEMENT MODE

Kurşunsuz

Contains Lead

REACH Uyumluluk Kodu

not_compliant

Pulsed Drain Currentmax Idm

200A

Rds On Max Id Vgs

13.2m Ω @ 50A, 10V

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

1711pF @ 25V

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

Automotive, AEC-Q101, OptiMOS™

Fet Type

N-Channel

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection

DRAIN

Continuous Drain Current Id

50A

Avalanche Energy Rating Eas

76 mJ

Kurşunsuz Kodu

yes

Montaj

Surface Mount

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

72W Tc

Vgsth Max Id

4V @ 33μA

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

2

Halogen Free

Halogen Free

Max Dual Supply Voltage

80V

Number Of Elements

1