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IPD50N06S4L12ATMA2

Infineon Technologies

IPD50N06S4L12ATMA2

Single MOSFETs Transistors

In StockRoHS: Compliant

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Same-day dispatch from stock

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Verified sourcing

RoHS

Compliant

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Technical team support

Specifications

JESD-609 Kodu
e3
Continuous Drain Current Id
50A
Rise Time
2ns
Avalanche Energy Rating Eas
33 mJ
Kurşunsuz Kodu
yes
Case Connection
DRAIN
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Montaj Tipi
Surface Mount
Seri
Automotive, AEC-Q101, OptiMOS™
Fet Type
N-Channel
Number Of Elements
1
Terminal Kaplaması
Tin (Sn)
Çalışma Sıcaklığı
-55°C~175°C TJ
Ambalaj
Tape & Reel (TR)
Terminal Sayısı
2
Max Dual Supply Voltage
60V
Power Dissipation Max
50W Tc
Vgsth Max Id
2.2V @ 20μA
Montaj
Surface Mount
Jesd30 Code
R-PSSO-G2
Nem Hassasiyeti (MSL)
1 (Unlimited)
Weight
3.949996g
Vgs Max
±16V
Parça Durumu
Active
Gate To Source Voltage Vgs
16V
Terminal Formu
GULL WING
Transistor Element Material
SILICON
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Fall Time Typ
5 ns
Gate Charge Qg Max Vgs
40nC @ 10V
Fabrika Tedarik Süresi
12 Weeks
Input Capacitance Ciss Max Vds
2890pF @ 25V
Number Of Channels
1
Rds On Max Id Vgs
12m Ω @ 50A, 10V
Pulsed Drain Currentmax Idm
200A
RoHS Durumu
ROHS3 Compliant
Turn On Delay Time
6 ns
Turn Off Delay Time
25 ns
Operating Mode
ENHANCEMENT MODE

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