IPD50N04S410ATMA1

Specifications

Case Connection

DRAIN

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

OptiMOS™

Montaj Tipi

Surface Mount

Avalanche Energy Rating Eas

42 mJ

Reference Standard

AEC-Q101

Power Dissipation Max

41W Tc

Vgsth Max Id

4V @ 15μA

Jesd30 Code

R-PSSO-G2

Çalışma Sıcaklığı

-55°C~175°C TJ

Number Of Elements

1

Terminal Sayısı

2

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

18.2nC @ 10V

Terminal Formu

GULL WING

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Ds Breakdown Voltagemin

40V

Terminal Pozisyonu

SINGLE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2010

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

50A Tc

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

1430pF @ 25V

Fabrika Tedarik Süresi

12 Weeks

Drain Currentmax Abs Id

50A

Pulsed Drain Currentmax Idm

200A

Drainsource On Resistancemax

0.0093Ohm

Rds On Max Id Vgs

9.3m Ω @ 50A, 10V

Drain To Source Voltage Vdss

40V