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IPD30N08S2L21ATMA1

Infineon Technologies

IPD30N08S2L21ATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Turn Off Delay Time
44 ns
Turn On Delay Time
9 ns
Power Dissipation
136W
Element Configuration
Single
Uzunluk
6.73mm
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Current Continuous Drain Id25
30A Tc
Input Capacitance Ciss Max Vds
1650pF @ 25V
Pulsed Drain Currentmax Idm
120A
Drainsource On Resistancemax
0.026Ohm
Pin Sayısı
3
Fall Time Typ
11 ns
Terminal Formu
GULL WING
Gate To Source Voltage Vgs
20V
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Vgsth Max Id
2V @ 80μA
Çalışma Sıcaklığı
-55°C~175°C TJ
Additional Feature
ULTRA-LOW RESISTANCE
Terminal Kaplaması
Tin (Sn)
Number Of Elements
1
Ambalaj
Tape & Reel (TR)
Max Dual Supply Voltage
75V
Halogen Free
Halogen Free
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Reach Svhc
No SVHC
Rise Time
30ns
Genişlik
6.22mm
Reference Standard
AEC-Q101
Operating Mode
ENHANCEMENT MODE
RoHS Durumu
ROHS3 Compliant
REACH Uyumluluk Kodu
not_compliant
Kurşunsuz
Lead Free
Yayın Yılı
2006
Fabrika Tedarik Süresi
10 Weeks
ECCN Kodu
EAR99
Rds On Max Id Vgs
20.5m Ω @ 25A, 10V
Drain To Source Breakdown Voltage
75V
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Yükseklik
2.41mm
Gate Charge Qg Max Vgs
72nC @ 10V

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