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IPD30N03S2L20ATMA1

Infineon Technologies

IPD30N03S2L20ATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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Genuine parts

Verified sourcing

RoHS

Compliant

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Specifications

Montaj Tipi
Surface Mount
Configuration
SINGLE WITH BUILT-IN DIODE
Seri
OptiMOS™
Fet Type
N-Channel
Case Connection
DRAIN
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Continuous Drain Current Id
30A
Rise Time
15ns
Avalanche Energy Rating Eas
70 mJ
JESD-609 Kodu
e3
Montaj
Surface Mount
Jesd30 Code
R-PSSO-G2
Power Dissipation Max
60W Tc
Vgsth Max Id
2V @ 23μA
Ambalaj
Tape & Reel (TR)
Terminal Sayısı
2
Halogen Free
Halogen Free
Max Dual Supply Voltage
30V
Additional Feature
LOGIC LEVEL COMPATIBLE
Number Of Elements
1
Terminal Kaplaması
Tin (Sn)
Çalışma Sıcaklığı
-55°C~175°C TJ
Fall Time Typ
10 ns
Gate Charge Qg Max Vgs
19nC @ 10V
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Transistor Element Material
SILICON
Terminal Pozisyonu
SINGLE
Nem Hassasiyeti (MSL)
1 (Unlimited)
Vgs Max
±20V
Parça Durumu
Active
Gate To Source Voltage Vgs
20V
Terminal Formu
GULL WING
Current Continuous Drain Id25
30A Tc
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Yayın Yılı
2004
RoHS Durumu
ROHS3 Compliant
Power Dissipation
60W
Turn On Delay Time
5 ns
Turn Off Delay Time
19 ns

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