IPD30N03S2L07ATMA1

Specifications

Drain To Source Voltage Vdss

30V

Drainsource On Resistancemax

0.0098Ohm

Pulsed Drain Currentmax Idm

120A

Rds On Max Id Vgs

6.7m Ω @ 30A, 10V

Input Capacitance Ciss Max Vds

1900pF @ 25V

ECCN Kodu

EAR99

Current Continuous Drain Id25

30A Tc

Yayın Yılı

2006

RoHS Durumu

RoHS Compliant

Turn On Delay Time

10 ns

Turn Off Delay Time

40 ns

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Parça Durumu

Obsolete

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Fall Time Typ

16 ns

Gate Charge Qg Max Vgs

68nC @ 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Pin Sayısı

3

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

2

Additional Feature

ULTRA LOW RESISTANCE

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj

Surface Mount

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

136W Tc

Vgsth Max Id

2V @ 85μA

Continuous Drain Current Id

30A

Rise Time

30ns

Avalanche Energy Rating Eas

250 mJ

Reference Standard

AEC-Q101

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

OptiMOS™

Fet Type

N-Channel