IPD26N06S2L35ATMA2

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

24nC @ 10V

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rds On Max Id Vgs

35m Ω @ 13A, 10V

Drainsource On Resistancemax

0.047Ohm

Pulsed Drain Currentmax Idm

120A

Fabrika Tedarik Süresi

10 Weeks

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

621pF @ 25V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

30A Tc

Yayın Yılı

2006

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Contains Lead

Continuous Drain Current Id

30A

Avalanche Energy Rating Eas

80 mJ

Reference Standard

AEC-Q101

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

OptiMOS™

Case Connection

DRAIN

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Ambalaj

Tape & Reel (TR)

Max Dual Supply Voltage

55V

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~175°C TJ

Additional Feature

ULTRA LOW RESISTANCE

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)