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IPD15N06S2L64ATMA2

Infineon Technologies

IPD15N06S2L64ATMA2

Single MOSFETs Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Montaj Tipi
Surface Mount
Fet Type
N-Channel
Seri
Automotive, AEC-Q101, OptiMOS™
Configuration
SINGLE WITH BUILT-IN DIODE
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Case Connection
DRAIN
Kurşunsuz Kodu
yes
Avalanche Energy Rating Eas
43 mJ
JESD-609 Kodu
e3
Jesd30 Code
R-PSSO-G2
Vgsth Max Id
2V @ 14μA
Power Dissipation Max
47W Tc
Yüzey Montaj
YES
Ambalaj
Tape & Reel (TR)
Halogen Free
Halogen Free
Max Dual Supply Voltage
55V
Terminal Sayısı
2
Çalışma Sıcaklığı
-55°C~175°C TJ
Terminal Kaplaması
Tin (Sn)
Number Of Elements
1
Gate Charge Qg Max Vgs
13nC @ 10V
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Transistor Element Material
SILICON
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Terminal Pozisyonu
SINGLE
Parça Durumu
Active
Vgs Max
±20V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Formu
GULL WING
Current Continuous Drain Id25
19A Tc
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Yayın Yılı
2006
Operating Mode
ENHANCEMENT MODE
RoHS Durumu
ROHS3 Compliant
REACH Uyumluluk Kodu
not_compliant
Kurşunsuz
Lead Free
Rds On Max Id Vgs
64m Ω @ 13A, 10V
Pulsed Drain Currentmax Idm
76A
Drainsource On Resistancemax
0.085Ohm
Drain Currentmax Abs Id
19A

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