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IPD135N03LGATMA1

Infineon Technologies

IPD135N03LGATMA1

Single MOSFETs Transistors

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Current Continuous Drain Id25
30A Tc
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Turn Off Delay Time
12 ns
Turn On Delay Time
3 ns
Power Dissipation
31W
Uzunluk
6.73mm
Element Configuration
Single
Pulsed Drain Currentmax Idm
210A
Transistor Application
SWITCHING
Drain To Source Voltage Vdss
30V
Input Capacitance Ciss Max Vds
1000pF @ 15V
Fall Time Typ
2.2 ns
Pin Sayısı
3
Pin Sayısı
4
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Terminal Formu
GULL WING
Gate To Source Voltage Vgs
20V
Vgsth Max Id
2.2V @ 250μA
Ambalaj
Tape & Reel (TR)
HTS Kodu
8541.29.00.95
Çalışma Sıcaklığı
-55°C~175°C TJ
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Kaplaması
Tin (Sn)
Number Of Elements
1
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Genişlik
6.22mm
Yayın Yılı
2008
Operating Mode
ENHANCEMENT MODE
RoHS Durumu
ROHS3 Compliant
REACH Uyumluluk Kodu
not_compliant
Rds On Max Id Vgs
13.5m Ω @ 30A, 10V
Jedec95 Code
TO-252AA
Fabrika Tedarik Süresi
18 Weeks
ECCN Kodu
EAR99
Yükseklik
2.41mm
Gate Charge Qg Max Vgs
10nC @ 10V
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Qualification Status
Not Qualified
Transistor Element Material
SILICON
Parça Durumu
Active

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