IPD12CN10NGATMA1

Specifications

Fabrika Tedarik Süresi

18 Weeks

Drain To Source Breakdown Voltage

100V

Rds On Max Id Vgs

12.4m Ω @ 67A, 10V

Jedec95 Code

TO-252AA

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Contains Lead

REACH Uyumluluk Kodu

not_compliant

Yayın Yılı

2008

Parça Durumu

Active

Vgs Max

±20V

Nem Hassasiyeti (MSL)

3 (168 Hours)

Transistor Element Material

SILICON

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

65nC @ 10V

Terminal Sayısı

2

Power Dissipation Max

125W Tc

Jesd30 Code

R-PSSO-G2

Montaj

Surface Mount

JESD-609 Kodu

e3

Continuous Drain Current Id

67A

Avalanche Energy Rating Eas

154 mJ

Kurşunsuz Kodu

yes

Case Connection

DRAIN

Montaj Tipi

Surface Mount

Fet Type

N-Channel

Seri

OptiMOS™

Input Capacitance Ciss Max Vds

4320pF @ 50V

Drainsource On Resistancemax

0.0124Ohm

Pulsed Drain Currentmax Idm

268A

Transistor Application

SWITCHING

Turn Off Delay Time

32 ns

Power Dissipation

125W

Turn On Delay Time

17 ns

Element Configuration

Single

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

67A Tc

Terminal Formu

GULL WING

Gate To Source Voltage Vgs

20V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED