IPD096N08N3GATMA1

Specifications

Terminal Sayısı

2

Max Dual Supply Voltage

80V

Halogen Free

Halogen Free

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~175°C TJ

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

100W Tc

Vgsth Max Id

3.5V @ 46μA

Avalanche Energy Rating Eas

90 mJ

Kurşunsuz Kodu

yes

Seri

OptiMOS™

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection

DRAIN

Drain Currentmax Abs Id

73A

Transistor Application

SWITCHING

Rds On Max Id Vgs

9.6m Ω @ 46A, 10V

Drainsource On Resistancemax

0.0096Ohm

Pulsed Drain Currentmax Idm

292A

Input Capacitance Ciss Max Vds

2410pF @ 40V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

18 Weeks

Yayın Yılı

2008

Current Continuous Drain Id25

73A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz

Contains Lead

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

GULL WING

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Gate Charge Qg Max Vgs

35nC @ 10V