IPD079N06L3GBTMA1

Specifications

Terminal Pozisyonu

SINGLE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Fall Time Typ

7 ns

Pin Sayısı

4

Pin Sayısı

3

Drainsource On Resistancemax

0.0079Ohm

Pulsed Drain Currentmax Idm

200A

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

4900pF @ 30V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

50A Tc

Turn On Delay Time

15 ns

Power Dissipation

79W

Turn Off Delay Time

37 ns

Rise Time

26ns

Configuration

SINGLE WITH BUILT-IN DIODE

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Halogen Free

Not Halogen Free

Max Dual Supply Voltage

60V

Ambalaj

Tape & Reel (TR)

Additional Feature

LOGIC LEVEL COMPATIBLE

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgsth Max Id

2.2V @ 34μA

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Parça Durumu

Active

Gate Charge Qg Max Vgs

29nC @ 4.5V

Qualification Status

Not Qualified

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Jedec95 Code

TO-252AA

Rds On Max Id Vgs

7.9m Ω @ 50A, 10V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

18 Weeks

Yayın Yılı

2003

REACH Uyumluluk Kodu

not_compliant