IPD053N08N3GATMA1

Specifications

Terminal Pozisyonu

SINGLE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Gate Charge Qg Max Vgs

69nC @ 10V

Fall Time Typ

10 ns

Drive Voltage Max Rds On Min Rds On

6V 10V

Pin Sayısı

3

Jedec95 Code

TO-252AA

Rds On Max Id Vgs

5.3m Ω @ 90A, 10V

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

4750pF @ 40V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

18 Weeks

Yayın Yılı

2008

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

90A Tc

Kurşunsuz

Contains Lead

RoHS Durumu

ROHS3 Compliant

Power Dissipation

150W

Turn On Delay Time

18 ns

Turn Off Delay Time

38 ns

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

190 mJ

Kurşunsuz Kodu

yes

Continuous Drain Current Id

90A

Rise Time

66ns

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

OptiMOS™

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Sayısı

2

Halogen Free

Halogen Free

Max Dual Supply Voltage

80V