IPD050N10N5ATMA1

Specifications

Terminal Formu

GULL WING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgs Max

±20V

Parça Durumu

Active

Terminal Pozisyonu

SINGLE

Ds Breakdown Voltagemin

100V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Drive Voltage Max Rds On Min Rds On

6V 10V

Gate Charge Qg Max Vgs

64nC @ 10V

Input Capacitance Ciss Max Vds

4700pF @ 50V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

13 Weeks

Drain Currentmax Abs Id

80A

Drain To Source Voltage Vdss

100V

Drainsource On Resistancemax

0.005Ohm

Pulsed Drain Currentmax Idm

320A

Rds On Max Id Vgs

5m Ω @ 40A, 10V

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

not_compliant

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2013

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

80A Tc

JESD-609 Kodu

e3

Avalanche Energy Rating Eas

110 mJ

Case Connection

DRAIN

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration

SINGLE WITH BUILT-IN DIODE

Seri

OptiMOS™

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ

Terminal Sayısı

2

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Power Dissipation Max

150W Tc