Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Vgs Max
- ±20V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 38nC @ 10V
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Rds On Max Id Vgs
- 4m Ω @ 30A, 10V
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 18 Weeks
- Yayın Yılı
- 2008
- Kurşunsuz
- Contains Lead
- Operating Mode
- ENHANCEMENT MODE
- RoHS Durumu
- ROHS3 Compliant
- Avalanche Energy Rating Eas
- 60 mJ
- Kurşunsuz Kodu
- no
- Continuous Drain Current Id
- 90A
- JESD-609 Kodu
- e3
- Fet Type
- N-Channel
- Seri
- OptiMOS™
- Montaj Tipi
- Surface Mount
- Case Connection
- DRAIN
- Terminal Sayısı
- 2
- Jesd30 Code
- R-PSSO-G2
- Montaj
- Surface Mount
- Power Dissipation Max
- 79W Tc
- Terminal Pozisyonu
- SINGLE
- Terminal Formu
- GULL WING
- Gate To Source Voltage Vgs
- 20V
- Fall Time Typ
- 4.2 ns
- Pin Sayısı
- 4
- Pin Sayısı
- 3
- Drain Currentmax Abs Id
- 89A
- Drainsource On Resistancemax
- 0.0059Ohm
- Radyasyon Dayanımı
- No
- Pulsed Drain Currentmax Idm
- 400A
- Transistor Application
- SWITCHING
- Input Capacitance Ciss Max Vds
- 3900pF @ 15V
- Current Continuous Drain Id25
- 90A Tc
- Turn Off Delay Time
- 27 ns
- Power Dissipation
- 79W
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