IPD034N06N3GATMA1

Specifications

Jedec95 Code

TO-252AA

Rds On Max Id Vgs

3.4m Ω @ 100A, 10V

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

18 Weeks

Yayın Yılı

2008

REACH Uyumluluk Kodu

not_compliant

Kurşunsuz

Contains Lead

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Gate Charge Qg Max Vgs

130nC @ 10V

Qualification Status

Not Qualified

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

2

Montaj

Surface Mount

Jesd30 Code

R-PSSO-G2

Power Dissipation Max

167W Tc

Kurşunsuz Kodu

no

Continuous Drain Current Id

100A

JESD-609 Kodu

e3

Seri

OptiMOS™

Fet Type

N-Channel

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Pulsed Drain Currentmax Idm

400A

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

11000pF @ 30V

Current Continuous Drain Id25

100A Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipation

167W

Turn On Delay Time

38 ns

Turn Off Delay Time

63 ns

Terminal Pozisyonu

SINGLE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate To Source Voltage Vgs

20V

Terminal Formu

GULL WING

Fall Time Typ

16 ns